專利名稱：Embedded semiconductor device package

and method of manufacturing thereof

發(fā)明人：Shakti Singh Chauhan,Paul Alan

McConnelee,Arun Virupaksha Gowda

申請(qǐng)?zhí)枺篣S14844515申請(qǐng)日：20150903公開號(hào)：US09391027B2公開日：20160712

專利附圖：

摘要：A package structure includes a dielectric layer, at least one semiconductordevice attached to the dielectric layer, one or more dielectric sheets applied to the

dielectric layer and about the semiconductor device(s) to embed the semiconductordevice(s) therein, and a plurality of vias formed to the semiconductor device(s) that areformed in at least one of the dielectric layer and the one or more dielectric sheets. Thepackage structure also includes metal interconnects formed in the vias and on one ormore outward facing surfaces of the package structure to form electrical

interconnections to the semiconductor device(s). The dielectric layer is composed of amaterial that does not flow during a lamination process and each of the one or moredielectric sheets is composed of a curable material configured to melt and flow whencured during the lamination process so as to fill-in any air gaps around the semiconductordevice(s).

申請(qǐng)人：General Electric Company

地址：Schenectady NY US

國籍：US

代理機(jī)構(gòu)：Ziolkowski Patent Solutions Group, SC

代理人：Jean K. Testa

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