專利名稱：Capacitor for a semiconductor device and

method for forming the same

發(fā)明人：Yeong-kwan Kim,In-seon Park,Sang-min

Lee,Chang-soo Park

申請?zhí)枺篣S09226006申請日：19990106公開號：US06335240B1公開日：20020101

專利附圖：

摘要：A capacitor having high capacitance using a silicon-containing conductive layer asa storage node, and a method for forming the same, are provided. The capacitor includes

a storage node, an amorphous AlOdielectric layer, and a plate node. The amorphousAlOlayer is formed by a method in which reactive vapor phase materials are supplied onthe storage node, for example, an atomic layered deposition method. Also, the storagenode is processed by rapid thermal nitridation before forming the amorphous AlOlayer.The amorphous AlOlayer is densified by annealing at approximately 850° C. after forminga plate node, to thereby realize the equivalent thickness of an oxide layer whichapproximates a theoretical value of 30 ?.

申請人：SAMSUNG ELECTRONICS CO., LTD.

代理機構(gòu)：Volentine Francos, PLLC

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