專利名稱：METHOD FOR FORMING A SILICIDE REGION

ON A SILICON BODY

發(fā)明人：TALWAR, Somit,VERMA, Guarav,KRAMER,

Karl-Joseph,WEINER, Kurt

申請?zhí)枺篍P902430.2申請日：19980109公開號：EP0976147B1公開日：20070425

摘要：The method of this invention produces a silicide region on a silicon body that isuseful for a variety of purposes, including the reduction of the electrical contactresistance to the silicon body or an integrated electronic device formed thereon. Theinvented method includes the steps of producing an amorphous region on the siliconbody using ion implantation, for example, forming or positioning a metal such as titanium,cobalt or nickel in contact with the amorphous region, and irradiating the metal withintense light from a laser source, for example, to cause metal atoms to diffuse into theamorphous region. The amorphous region thus becomes an alloy region with the desiredsilicide composition. Upon cooling after irradiation, the alloy region becomes partiallycrystalline. To convert the alloy region into a more crystalline form, the invented methodpreferably includes a step of treating the alloy region using rapid thermal annealing, forexample. An insulator layer and a conductive lead can subsequently be patterned toestablish electrical contact to the silicide region. The low contact resistivity of the silicideregion provides the capability to transmit relatively high- frequency electronic signalsthrough the contact region. In a preferred application, the invented method is used to

form self- aligned silicide contact regions for the gate, source and drain of a metal-insulator- semiconductor field-effect transistor (MISFET).

申請人：ULTRATECH INC

地址：US

國籍：US

代理機構：Neobard, William John

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