HiPerFETTM Power MOSFETsISOPLUS247TM

(Electrically Isolated Back Surface)Single MOSFET Die

IXFR 90N30

VDSS=300VID25=75ARDS(on)= 33 mWtrr ￡ 250 ns

SymbolVDSSVDGRVGSVGSMID25IDMIAREAREASdv/dtPDTJTJMTstgTLVISOLWeight

Test Conditions

TJ= 25°C to 150°C

TJ= 25°C to 150°C; RGS = 1 MWContinuousTransientTC= 25°C

TC= 25°C, Note 1TC= 25°CTC= 25°CTC= 25°C

IS￡ IDM, di/dt ￡ 100 A/ms, VDD ￡ VDSSTJ￡ 150°C, RG = 2 WTC= 25°C

Maximum Ratings

300300±20±307536090300

-55 ... +150

150

-55 ... +150

VVVVAAAmJJV/nsW°C°C°C°CV~g

ISOPLUS 247TM

E153432

Isolated backside*

G = GateS = Source

D = Drain

* Patent pending

1.6 mm (0.063 in.) from case for 10 s50/60 Hz, RMS

t = 1 min

3002500

5

Featuresl

Silicon chip on Direct-Copper-Bondsubstrate

- High power dissipation- Isolated mounting surface- 2500V electrical isolationl

Low drain to tab capacitance(<30pF)

lll

Low RDS (on) HDMOSTM processRugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)ratedl

Fast intrinsic RectifierApplicationsl

DC-DC converters

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SymbolTest Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min.typ.max.

3002.0

V4.5 V±100 nA

TJ = 25°CTJ = 125°C

100 mA2 mA

33 mW

Battery chargers

Switched-mode and resonant-modepower suppliesDC choppers

AC & DC motor control

VDSSVGS(th)IGSSIDSSRDS(on)

VGS = 0 V, ID = 250mA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3

Advantagesl

Easy assembly

lll

Space savingsHigh power densityLow noise to ground

987 (11/00)

? 2000 IXYS All rights reserved

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IXFR90N30Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)min.typ.max.Notes 2, 3407010000VGS = 0 V, VDS = 25 V, f = 1 MHz180070042VGS = 10 V, VDS = 0.5 ? VDSS, ID = ITRG = 2.0 W (External), Notes 2, 35510040360VGS = 10 V, VDS = 0.5 ? VDSS, ID = IT601800.300.15SpFpFpFnsnsnsnsnCnCnCK/WK/W Dim.1 Gate, 2 Drain (Collector)3 Source (Emitter)4 no connectionMillimeterMin.Max.A4.835.21A12.292.A21.912.16b1.141.40b11.912.13b22.923.12C0.610.80D20.8021.34E15.7516.13e 5.45 BSCL19.8120.32L13.814.32Q5.596.20R4.324.83InchesMin.Max..190.205.090.100.075.085.045.055.075.084.115.123.024.031.819.840.620.635.215 BSC.780.800.150.170.220.244.170.190 ISOPLUS 247 OUTLINEgfsCissCossCrsstd(on)trtd(off)tfQg(on)QgsQgdRthJCRthCKVDS= 10 V; ID = ITSource-Drain DiodeSymbolISISMVSDtrrQRMIRMTest ConditionsVGS= 0 VRepetitive; Note 1IF = IT, VGS = 0 V, Notes 2, 3Characteristic Values

(TJ = 25°C, unless otherwise specified)

min.typ.max.903601.52501.4AAVnsmCAIF = 50A,-di/dt = 100 A/ms, VR = 100 V10Note:1. Pulse width limited by TJM

2. Pulse test, t ￡ 300 ms, duty cycle d ￡ 2 %3. IT = 45A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,5924,850,072

4,881,10,931,844

5,017,5085,034,796

5,049,9615,063,307

5,187,1175,237,481

5,486,7155,381,025