專利名稱：Method of detaching a thin film by melting

precipitates

發(fā)明人：Aurélie Tauzin,Bruce Faure,Arnaud Garnier申請(qǐng)?zhí)枺篣S12293193申請(qǐng)日：20070328公開(kāi)號(hào)：US07670930B2公開(kāi)日：20100302

專利附圖：

摘要：A method of fabricating a thin film from a substrate includes implantation intothe substrate, for example made of silicon, of ions of a non-gaseous species, for examplegallium, the implantation conditions and this species being chosen, according to thematerial of the substrate, so as to allow the formation of precipitates confined in acertain depth, distributed within a layer, these precipitates being made of a solid phasehaving a melting point below that of the substrate. The method optionally furtherincluding intimate contacting of this face of the substrate with a stiffener, anddetachment of a thin film by fracturing the substrate at the layer of precipitates byapplying a mechanical and/or chemical detachment stress under conditions in which theprecipitates are in the liquid phase.

申請(qǐng)人：Aurélie Tauzin,Bruce Faure,Arnaud Garnier

地址：Saint Egreve FR,Grenoble FR,Grenoble FR

國(guó)籍：FR,FR,FR

代理機(jī)構(gòu)：Brinks Hofer Gilson & Lione

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